rf-Magnetron sputter deposited ZrO2 dielectrics for metal–insulator–semiconductor capacitors

ZrO2 gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering, and its structure, surface morphology and electrical properties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the ZrO2 gate dielectric thin films by decreasing the number of interfacial traps at the ZrO2/Si interface. The carrier transport mechanism is dominated by the thermionic emission.