Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691633 | Vacuum | 2008 | 4 Pages |
Abstract
ZrO2 gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering, and its structure, surface morphology and electrical properties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the ZrO2 gate dielectric thin films by decreasing the number of interfacial traps at the ZrO2/Si interface. The carrier transport mechanism is dominated by the thermionic emission.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
K. Prabakar, Anna Park, Namhee Cho, Wan In Lee, Chang Kwon Hwangbo, Jae Gab Lee, Chongmu Lee,