Composition and optical properties of silicon nitride films grown on SiO2-glass and R-Al2O3 substrates by reactive RF magnetron sputtering

We have grown silicon nitride (Si3N4) films on SiO2-glass and R-Al2O3 substrates by using reactive RF magnetron sputtering deposition methods with N2 pure gas and N2 + Ar mixture gas. The film composition, thickness and impurities have been examined by ion beam analysis. It is shown that the films have stoichiometric composition and are free from Ar contamination, when N2 gas was used for the film deposition. Effects of impurities on the film properties, e.g., optical properties will be discussed.