| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1691718 | Vacuum | 2006 | 5 Pages |
Abstract
Deposition of polycrystalline copper (I) selenide thin films onto glass substrates at relatively low temperature (95 °C) have been carried out by chemical route using optimized preparative conditions. The XRD pattern confirmed the formation of copper (I) selenide semiconducting films with orthorhombic structure. A direct-type transition with band gap energy of 1.73 eV was reported from optical absorption studies. p-Type behavior confirmed from sign of thermally induced voltage (thermo-emf), which may find interesting applications in hetero-junction solar cells as an absorber layer.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
R.S. Mane, S.P. Kajve, C.D. Lokhande, Sung-Hwan Han,