Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691728 | Vacuum | 2006 | 4 Pages |
Abstract
We improved both the thickness uniformity and crystallinity of Aluminum nitride (AlN) films deposited by off-axis sputtering. The results in thickness uniformity and X-ray rocking curve full-width at half-maximum (FWHM) of AlN (0 0 0 2) are achieved to be ±0.2% and 1.4°, respectively on a 100 mm Si (1 0 0) substrate. The residual stress can be controlled from tensile to compressive by varying sputtering parameters such as gas pressure, RF power and DC bias voltage applied to a substrate without degradation in the crystallinity and thickness uniformity.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Keiichi Umeda, Masaki Takeuchi, Hajime Yamada, Ryuichi Kubo, Yukio Yoshino,