Application of high-density plasma to sputtering and reactive sputtering processes

An investigation of thin-film preparation processes by sputtering technique has been carried out utilizing the high-density plasma induced by the microwave power coupled in the surface wave mode. The high sputtering rate arising from the high ion current to the target is expected to be advantageous for processes of nitride surface and compounds. An independent control of the external bias potential to the target and of the gas mixture ratio is demonstrated to be possible by the mode-locking mechanism. Ferromagnetic films of FeNi alloy were deposited on glass substrates. Films of TiN and of AlN were produced on plastic substrates and on glasses.