| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1691759 | Vacuum | 2006 | 5 Pages |
Abstract
Various ion-beam etching characteristics of diamond and selectivity between diamond and spin-on-glass (SOG) were examined. The maximum selectivity of diamond and SOG was 12.7 in oxygen reactive ion-beam etching process at 100 V acceleration voltage. Using this etching condition and dot-shaped SOG mask, conical diamond field electron emitter arrays with 30 nm curvature radius, 2.58 μm base radius and 5.86 μm height were fabricated.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Jun Taniguchi, Hirohisa Ohno, Yusaku Kawabata, Iwao Miyamoto,