| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1691784 | Vacuum | 2008 | 5 Pages |
Abstract
We studied electrical parameters of Sn/p-Si Schottky barrier diodes (SBDs) by using in situ current-voltage (I-V) and capacitance-voltage (C-V) measurements under γ-irradiation at room temperature. The devices were held under zero bias during γ-irradiation with dose rate 0.25 kGy/h, and the total dose range was 0-45 kGy. Irradiation results indicated that these devices may have applications as radiation sensors in order to detect the low-energy γ radiation.
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Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Ã. Güllü, F. Demir, F.E. Cimilli, M. Biber,