Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691796 | Vacuum | 2008 | 4 Pages |
Abstract
In high-power pulsed magnetron sputtering, a large power density is applied giving rise to a high degree of ionization. From an application point of view, the major drawback of this technology is the considerably lower deposition rate as compared to DC magnetron sputtering. Using transport-of-ions-in-matter simulations, we show that the apparently low deposition rate can be understood based on the non-linear energy dependence of the sputtering yields. Our calculations are consistent with deposition-rate measurements on Cu films as well as with published deposition-rate data for Ti [Konstantinidis S, Dauchot JP, Ganciu M, Ricard A, Hecq M. J Appl Phys 2006;99:013307].
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Jens Emmerlich, Stanislav Mráz, Rony Snyders, Kaiyun Jiang, Jochen M. Schneider,