Mechanical and environmental properties of Ge1−xCx thin film

Ge1−xCx thin film was prepared by plasma-enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 as precursors and its mechanical and environmental properties were investigated. The samples were measured by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectrum, FT-IR spectrometer, WS-92 testing apparatus of adhesion and FY-03E testing apparatus of salt and fog. The results show that the infrared refractive index of Ge1−xCx thin film varies from 2 to 4 with different x values. The adhesion increases with increasing gas flow ratio of GeH4/CH4 and decreases with increasing film thickness. The nanoindentation hardness number decreases with increasing germanium content. Three series films exhibit the best anti-corrosion property when the RF power is about 80 W, or substrate temperature is about 150 °C, or DC bias is about −100 V. Furthermore, increasing the gas flow ratio of GeH4/CH4 improves the anti-corrosion property of these films.