Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691806 | Vacuum | 2008 | 5 Pages |
Abstract
Epitaxial YbVO4 films have been grown on sapphire and Si/SiO2 substrates by pulsed laser deposition. Films were grown over a range of temperatures from 600 to 700 °C in the presence of an oxygen pressure between 2 and 20 Pa. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), high-resolution scanning electron microscopy (HRSEM), and dark-mode prism coupling measurements. YbVO4 films show epitaxial growth and display one main axis orientation of (2 0 0). The degree of crystal orientation increases with increasing depositing temperature and oxygen pressure up to 700 °C and 20 Pa, respectively. AFM and HRSEM measurements show that the prepared films are dense and homogeneous and three-dimensional-island growth mechanism is confirmed. According to prism coupling measurements, sharp dip is observed for both transverse-electric (TE) and transverse-magnetic (TM) mode, which means that the light could be well confined in the prepared film.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hongxia Li, Xin Wu, Renguo Song, Jiyang Wang, Huaijin Zhang,