Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1691817 | Vacuum | 2008 | 4 Pages |
Abstract
MgxZn1âxO thin films were grown on c-sapphire substrates by metal-organic chemical vapor deposition (MOCVD), followed by annealing in vacuum at different temperatures for 1Â h. The UV emission peak was blue shifted in the photoluminescence (PL) spectra and a dramatic shift of (0Â 0Â 2) diffraction peak to higher angle was observed in X-ray diffraction (XRD) pattern with increasing anneal temperature. This suggested the band gap and the lattice parameter of MgxZn1âxO had been affected by annealing in vacuum. Furthermore, the structure of the film became sparser due to annealing in vacuum. From the X-ray photoelectron spectroscopy (XPS) and ICP of the MgxZn1âxO film, we can find that the anneal temperature have an effect on the content of each element in MgxZn1âxO quantitatively. In addition, the value of x in MgxZn1âxO varied slightly as the annealing temperature increased. The above phenomena indicated that annealing in vacuum could slightly adjust the percentage of Mg indirectly in MgxZn1âxO film and offer a good idea in MgxZn1âxO devices facture.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Xin Dong, Huichao Zhu, Baolin Zhang, Weifeng Liu, Xiangping Li, Tianpeng Yang, Guotong Du,