| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1691829 | Vacuum | 2007 | 4 Pages |
Abstract
Uniformity doping, δ-doping and growth-interruption doping to produce gallium nitride (GaN): Mg has been investigated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). It was demonstrated by electrical, optical, and surface studies that films produced by growth-interruption-Mg-doping produce the best crystal quality, this doping method increasing self-compensation because of the incorporation of additional impurities during the interruption period. Mg-δ-doping employs GaN:Mg/UGaN superlattices valence band edge oscillation to enhance hole concentration leading to significantly reduced p-type resistivity, enhanced hole mobility. This doping method also leads to improved surface morphology.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Xing Yanhui, Han Jun, Liu Jianping, Niu Nanhui, Deng Jun, Litong, Shen Guangdi,