Numerical Simulation and Experimental Study on Resist Filling Behavior in UV-nanoimprint Lithography

The resist filling behavior is crucial to the quality of the final imprinted pattern in NIL. A numerical model was built to predict the resist filling process. The effect of the duty ratio of recessed feature on the cross-sectional profile of imprinted resist and the filling mode of resist from double-peak to single-peak mode were analyzed. A three-dimensional defocusing digital particle image velocimetry system was set up to verify the correctness of simulation results. The research results will help to understand the resist filling mechanism and provide useful instruction for selection of process parameters and mold structure optimization.