Simulation of the diffusion of point defects in structures with local elastic stresses

The stress-mediated diffusion of nonequilibrium point defects into the bulk of a semiconductor is investigated by computer simulation. It is assumed that the point defects are generated on the surface of a semiconductor and that in the course of diffusion they pass through the local region of elastic stresses because the average length of defect migration is greater than the thickness and depth of the strained layer. Within the strained layer, point defect segregation or heavy defect depletion occurs if defect drift under stresses is directed in or out of the layer, respectively. The calculations also show that, in contrast to the case of local defect sink, the local region of elastic stresses practically does not change the distribution of defects beyond this region if there is no generation/absorption of point defects within the strained layer.