Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1704992 | Applied Mathematical Modelling | 2011 | 14 Pages |
A first principle based mathematical model has been developed to characterise the effect of total liquid hold-up on the bosh silicon distribution behaviour in the dripping zone of a blast furnace. Two specific cases of hold-up behaviour have been investigated, namely, hold-up in the absence and in the presence of counter current gas flow conditions. The model exemplifies coupled phenomenon of chemical kinetics, transport processes and liquid hold-up to characterise the silicon behaviour in the dripping zone. The present modelling investigation shows that the bosh silicon level diminishes with the enhanced liquid hold-up in the dripping zone. Further, the influence of counter current gas flow on the hold-up is not significant. However, it has been observed that the liquid phase temperature reduces with increased liquid hold-up in dripping zone under steady state operating conditions. The model predictions of bosh silicon distribution have been validated with the published literatures (bulk values) and found to be in good agreement.