Devices performance tuned by molecular film-forming properties and electron trap for WORM memory application

Small molecules with different film-forming properties and electron traps were synthesized and characterized in the meantime. An electrical memory device with the indium-tin-oxide (ITO)/Small-Molecule/Al sandwich structure was fabricated and its electrical performance was investigated. WORM storage devices with different threshold voltages were obtained, some of which present “ternary” property. The relationship between turn-on voltage and the energy barrier between active materials and electrodes was revealed by the cyclic voltammetry measurement. The molecular film-forming properties and electron traps are responsible for device performances collectively, which could be elucidated unambiguously from UV–vis absorption spectra and X-ray diffraction patterns.

► Some compounds were synthesized and sandwiched devices based on them were fabricated. ► All the devices show WORM storage characteristics with different threshold voltages. ► The cyclic voltammetry curve explained the different devices’ turn-on voltage. ► UV–vis and XRD spectra explained the device’s conductance switching mechanism.