InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1 = 5.2 μm, 300 K) operating in the 77-353 К temperature range

Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the 77-353 K temperature range. Spectral response peculiarities and temperature induced peak shift (λ = 4-4.8 μm) were explained within simple phenomenological model based on proximity of the active layer thickness and hole diffusion length while reasons for a sensitivity decrease at low temperatures are still less evident. Transition from a generation-recombination to a diffusion current flow mechanisms with temperature increase appeared to be close to that for the InAs based diodes.