Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP)

•Molecular Beam Epitaxy growth of DWELL QDIP.•Silicon doping.•Detector response.•Temperature dependance.

We report the growth by Molecular Beam Epitaxy (MBE), fabrication and characterization of silicon doped 20 layer InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP) device structures. Two structures with InAs dots of vertical heights of 50 Å and 40 Å were compared. A 2–8 μm band normal incidence photo response of the detector with polarization and bias dependence was obtained at 77 K. The specific peak detectivity D∗ be 0.8 × 109 Jones for one of the detectors.