| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1784131 | Infrared Physics & Technology | 2015 | 6 Pages |
Abstract
We report on the design, growth, fabrication and characterization of dual-band (long-/long-wave infrared) type-II InAs/GaSb strained layer superlattice (T2SL) detectors with pBp architecture. Under operating the bias of â200 mV and +100 mV, quantum efficiencies of 37% (â¼11 μm band) and 25% (â¼9 μm band) were realized, respectively. To reduce the dark current in a dual-band T2SL detector, the effect of a “restoration” chemical etch treatment and ZnTe passivation on device performance were investigated.
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Authors
E. Plis, S. Myers, D. Ramirez, E.P. Smith, D. Rhiger, C. Chen, J.D. Phillips, S. Krishna,