Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

In this work we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77-325 K temperature range, indicating potential for room temperature operation. The device dark current stays diffusion limited in the 150-325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities of D*(λ) = 1 × 109 (cm Hz0.5/W) at T = 300 K and D*(λ) = 5 × 109 (cm Hz0.5/W) at T = 250 K, which is easily achievable with a one stage TE cooler.