Article ID Journal Published Year Pages File Type
1784409 Infrared Physics & Technology 2013 5 Pages PDF
Abstract

•Extension of the two-component superlattice empirical pseudopotential method (SEPM).•Model includes interface layers and As-content of the barrier and the interface.•Accurate bandgap prediction for InAs/GaSb superlattices with thin layers.

For the design of InAs/GaSb superlattice (SL) heterojunction infrared photodetectors with very low dark current we have extended the standard two-component superlattice empirical pseudopotential method (SEPM) and implemented a four-component model including interface layers. For both models, the calculated bandgap values for a set of SL samples are compared to bandgaps determined by photoluminescence measurements. While the bandgap resulting from the two-component model agrees well with experimental data for SL structures with individual layer thicknesses of 7 monolayers and more, we show that for SLs with thinner GaSb layers the four-component SEPM model is accurate, when the As-content in the interface and barrier layers is included in the model.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Atomic and Molecular Physics, and Optics
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