Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1784434 | Infrared Physics & Technology | 2013 | 6 Pages |
Abstract
Photodiodes were fabricated consisting of 10 layers of In0.5Ga0.5Sb QDs grown on InAs (0Â 0Â 1) substrates with metal-organic vapor-phase epitaxy (MOVPE). The photoresponse and dark current were measured in single pixel devices as a function of temperature in the range 20-230Â K. The quantum efficiency shows an Arrhenius type behavior, which is attributed to hole trapping. This severely limits the detector performance at typical LWIR sensor operating temperatures (60-120Â K). A device design with the matrix material InAs0.6Sb0.4 is proposed as a mean to improve the performance by reducing the barrier for hole transport. This can potentially allow type-II InGaSb QDs to be a competitive sensor material for LWIR detection.
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Atomic and Molecular Physics, and Optics
Authors
O. Gustafsson, A. Karim, C. Asplund, Q. Wang, T. Zabel, S. Almqvist, S. Savage, J.Y. Andersson, M. Hammar,