Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1784450 | Infrared Physics & Technology | 2014 | 9 Pages |
Abstract
Theoretical results were related to the experimental data of the MWIR n+/B/n/N+ photodetectors grown by MOCVD. Dark currents of the first fabricated devices are limited by undesirable iodine diffusion from cap layer to the barrier. However, the nBn architecture might be a promising solution for HgCdTe infrared detectors grown by MOCVD, mainly due to the possibility of in situ acceptor doping of the barrier.
Related Topics
Physical Sciences and Engineering
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Authors
M. Kopytko,