Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1784452 | Infrared Physics & Technology | 2014 | 4 Pages |
Abstract
Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100-300Â K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs.
Keywords
Related Topics
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Authors
P.N. Brunkov, N.D. Il'inskaya, S.A. Karandashev, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus', A.A. Usikova,