| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1784638 | Infrared Physics & Technology | 2013 | 4 Pages |
Abstract
InSb has been grown by liquid phase epitaxy using indium rich solutions with a supercooling of 2–5 °C onto (1 1 1) oriented Cd0.955Zn0.045Te substrates at 400–405 °C. The resulting epitaxial layers were extensively characterized using X-ray diffraction, optical microscopy, Raman spectroscopy and photoluminescence.
► InSb has been grown by liquid phase epitaxy onto (1 1 1) oriented Cd0.955Zn0.045Te substrates. ► The epilayers were smooth and lattice matched to the Cd0.955Zn0.045Te substrate. ► The resulting epilayers were characterized by XRD, optical microscopy, Raman spectroscopy and photoluminescence. ► Raman and FTIR spectroscopy confirmed that InSb epilayers can be grown on CdTe or Cd0.955Zn0.045Te substrates by LPE.
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Authors
M. Yin, A. Krier,