Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1784679 | Infrared Physics & Technology | 2011 | 4 Pages |
Abstract
Micro-Raman spectroscopy was used to evaluate the surface quality of Hg1âxCdxTe (x = 0.3) epitaxial layers polished with chemo-mechanical and free chemical etching processes. Raman technique has been employed to monitor the HgCdTe detector array fabrication process to ensure epilayer surface devoid of impurities and minimal damage. Chemical etching with bromine-methanol solution is seen to leave residual damage or non-stoichiometric HgCdTe surface layer indicated by an asymmetrical broadening and down shift in all Raman peaks. A peak at 112 cmâ1 as defect mode or due to disordering on the epilayer surface has been noticed.
Related Topics
Physical Sciences and Engineering
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Authors
Anand Singh, R. Pal, V. Dhar, S.C. Pant,