| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1784731 | Infrared Physics & Technology | 2011 | 4 Pages |
Abstract
A two-terminal quantum-dot infrared photodetector (QDIP) with stacked 5-period InAs/GaAs and InGaAs-capped InAs/GaAs QD structures is investigated in this paper. The device has exhibited distinct responses at mid-wavelength and long-wavelength infrared regions under positive and negative biases, respectively. Also observed for the device are the equal normal absorption ratios under different voltage biases for the device under either MWIR or LWIR ranges. The device has revealed its potential in the application of voltage-tunable and multi-color detections.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
Wei-Hsun Lin, Shih-Yen Lin, Chi-Che Tseng, Shu-Yen Kung, Kuang-Ping Chao, Shu-Cheng Mai, Meng-Chyi Wu,