Terahertz and infrared detectors based on graphene structures

We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p–i–n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.