Article ID Journal Published Year Pages File Type
1785060 Infrared Physics & Technology 2006 5 Pages PDF
Abstract

Vanadium oxide films with temperature coefficient of resistant of −2.6% K−1 have been fabricated on Si3N4-film-coated Si substrates by ion beam sputtering in a controlled Ar/O2 atmosphere, at a relatively low growth temperature of 200 °C. The as-deposited films show no semiconductor-to-metal phase transitions even heated up to 150 °C. X-ray diffractometry shows that the main compound of the VOx film is a metastable phase of vanadium dioxide (VO2(B)) and the VO2(B) film can be transformed into VO2 film by post-growth annealing at 450 °C in flowing Ar atmosphere.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Atomic and Molecular Physics, and Optics
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