| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1785113 | Infrared Physics & Technology | 2007 | 4 Pages |
Abstract
The influence of gate dimensions on the detectivity of uncooled amorphous silicon thin film transistor infrared sensors is analyzed theoretically. The relationship between the structure parameter of thin film transistor and electronic as well as thermal responsivity is simulated by finite element analysis software. Optimized structure has been carried out through theoretical analysis and ANSYS 8.0 simulation.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
Liu Xing-ming, Han Lin, Liu Li-tian,