Article ID Journal Published Year Pages File Type
1785141 Infrared Physics & Technology 2008 6 Pages PDF
Abstract

Using heterojunction structure with relative thin linearly graded InxAl1−xAs as buffer layer and In0.8Al0.2As as cap layer, wavelength extended In0.8Ga0.2As photodiodes with 50% cut-off wavelength of 2.42 μm at room temperature have been grown by using gas source MBE with a convenient but reliable procedure, and their performance over a wide temperature range have been extensively investigated. This structure with wider bandgap buffer and cap is suitable for both front and back illuminations. For those photodiodes with 500 μm mesa diameter, the typical dark current (VR = 10 mV) and R0A are 160 nA/137 Ω cm2 at 290 K, and 26.7 pA/1.08 MΩ cm2 at 150 K, respectively for doping level of 1E17 cm−3, at this higher doping level decrease in the response and appearance of unusual spectrum were also observed, which leaves a room for the careful optimization of the doping and structure.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Atomic and Molecular Physics, and Optics
Authors
, , , , , ,