| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1785210 | Infrared Physics & Technology | 2007 | 5 Pages |
Abstract
In order to improve spectral response tunability of quantum-dot infrared photodetectors (QDIPs), it is critical to understand how dopants are incorporated into quantum dots (QDs). In this letter, polarization-dependent Fourier transform infrared spectroscopy is used to measure intraband absorption in InAs/GaAs QDs. Through the investigation of device heterostructures with varying modulation-doped carrier concentrations, we have correlated the charge filling process of energy levels in high-density QD ensembles with IR absorbance spectra. In addition, we have observed the IR signature of a transition originating in deep-level defect centers arising from Si-doped GaAs.
Related Topics
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Authors
Z.Y. Zhao, C. Yi, A.D. Stiff-Roberts, A.J. Hoffman, D. Wasserman, C. Gmachl,