| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1785238 | Infrared Physics & Technology | 2007 | 5 Pages |
Abstract
Higher responsivity of quantum well infrared photodetectors based on In0.53Ga0.47As–InP material system compared to the well established GaAs–AlGaAs material system is analyzed. It is shown that the higher responsivity of the former results mainly from its smaller capture probability, pc, than that of the latter. Both transport as well as L valley occupancy appear important in determining the pc.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Atomic and Molecular Physics, and Optics
Authors
B.M. Arora, A. Majumdar, A.P. Shah, M.R. Gokhale, S. Ghosh, A. Bhattacharya, D. Sengupta,