| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1785244 | Infrared Physics & Technology | 2007 | 7 Pages |
Abstract
A novel two color infrared (IR) device that allows fast electrical switching between the short wavelength IR (SWIR) band (0.9-1.6 μm) and the long wavelength IR (LWIR) band (8-12 μm) is presented. The integrated sensor is based on MOCVD grown, lattice matched (to InP substrate) epilayers of InGaAs/InP and consists of two, monolithically integrated sections of heterojunction bipolar transistor (HBT) and quantum well infrared photodetector (QWIP).
Related Topics
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Authors
N. Cohen, R. Gardi, G. Sarusi, A. Sa'ar, M. Byloos, A. Bezinger, A.J. SpringThorpe, H.C. Liu,