| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1785475 | Current Applied Physics | 2016 | 4 Pages |
•The polycrystalline 0.67Bi1.05FeO3-0.33BaTiO3 lead-free piezoelectric thin film is fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by using pulsed laser deposition technique and compared with the properties of BiFeO3 thin film.•The local piezoelectric constant (d33PFM) of 0.67Bi1.05FeO3-0.33BaTiO3 thin film is 92.5 pm/V which is as high as lead-based piezoelectric thin film results.•From the temperature dependent dielectric constant result, the Curie temperature was 405 °C.
Polycrystalline 0.67Bi1.05FeO3-0.33BaTiO3 (BF33BT) lead-free piezoelectric thin film is fabricated on Pt(111)/Ti/SiO2/Si(100) substrate by using pulsed laser deposition technique. The remnant polarization (2Pr) and coercive field (2EC) observed from polarization hysteresis (P-E) loop are 18 μC/cm2 and 208 kV/cm, respectively. The local piezoelectric constant (d33,PFM) of BF33BT thin film is 92.5 pm/V which is as high as lead-based piezoelectric thin film results. From the temperature dependent dielectric constant result, the Curie temperature is 405 °C. These results show that BF33BT thin film is a promising candidate for lead-free piezoelectric nano- and micro-devices with high Curie temperature.
