Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1789508 | Journal of Crystal Growth | 2016 | 8 Pages |
•We report high quality nearly on-axis SiC growth with a two regime growth model.•Unique etching and chemical reactions of a novel Si precursor are explained.•Conditions for 3C, spiral and uniform step flow epilayer growth are discussed.•New reaction pathways at C rich conditions to obtain step flow growth highlighted.
We report high quality homoepitaxial growth on nearly on-axis (±0.5°±0.5°) 4H–SiC substrates by chemical vapor deposition (CVD) using Tetrafluorosilane and Propane as Si and C-precursors, respectively. N-type unintentional doping (1017–1014 cm−3) was obtained for 0.6