Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1789527 | Journal of Crystal Growth | 2016 | 6 Pages |
•GaN doping with carbon from propane was studied in wide range of MOVPE conditions.•Increase of growth rate results in strong rise of incorporated carbon concentration.•At low growth rate doping level is proportional to C3H8 concentration in power 3/2.•At 45 μm/h growth rate a strong linear or sub-linear component of the dependence arise.•Carbon concentration is inverse proportional to square of ammonia concentration.
Complex studies of intentional GaN carbon doping from propane during MOVPE were performed in a wide range of growth conditions. A strong dependence of carbon doping efficiency on growth rate and ammonia flow is revealed, while dependence of carbon doping efficiency on reactor pressure is small. Atomic force microscopy confirms the good quality of the GaN:C layers for doping levels as high as 2*1019 cm−3 grown with growth rate up to 45 μm/h. The dependence of carbon incorporation into GaN is proportional to the propane concentration to the power 3/2 in most growth regimes, but for very high growth rate a linear or sub-linear component of the dependence becomes prominent.