Investigation of thermodynamics properties of chalcopyrite compound CdGeAs2

Chalcopyrite of CdGeAs2 single crystal was grown by a modified vertical Bridgman method with sufficient size and quality, and its optical, electrical and thermodynamic properties are characterized. The transmission is recorded in the 2.3-18 μm range, and the band-gap at room temperature is at 0.56 eV. Non-ideal transparency near 5.5 μm which limited its application severely exists in the front of the crystal. The crystal is p type at room temperature with hole concentrations varying from 1014 to 1016 cm−3. From the results of X-ray diffraction measurements carried out over the range 25-450 °C and thermal dilatometer tests, the thermal expansion coefficients are evaluated. And on this basis the Grüneisen parameters at different temperatures are evaluated and also exhibit anisotropic behavior (γa>γc). It is found that γa, γc, and γV have some difference between these two kinds of test methods. Using these Grüneisen parameters, lattice thermal conductivities have been deduced by two correction formulas. Meanwhile, specific heat capacity and thermal conductivity of [204] have been obtained as a function of temperature by experiment.