Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1789670 | Journal of Crystal Growth | 2016 | 10 Pages |
Abstract
The current article reports about the influence of temperature and glass substrate on Ga/In interdiffusion and chalcopyrite phase formation in the stacked elemental layer process. According to the Shockley-Queisser limit the optimum for single junction devices is near 1.4Â eV, which is strongly coupled on the Ga/(Ga+In) ratio of Cu(In,Ga)Se2 thin film solar cells. To increase the Ga content in the active region of the Cu(In,Ga)Se2 a 70:30 CuGa alloy target is used. An increase of the selenization temperature leads to a more homogeneous Ga/In distribution and a less pronounced Ga agglomeration at the back contact. The Ga/In interdiffusion rates for different selenization temperatures and substrates were estimated with the model of a two layer system. At the highest selenization temperature used an absorber band gap of 1.12Â eV was realized, which is similar to typical values of absorbers produced during the co-evaporation process. The Na diffusion into the Cu(In,Ga)Se2 is weakly temperature dependent but strongly influenced by the choice of the glass substrate composition.
Related Topics
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Condensed Matter Physics
Authors
B.J. Mueller, T. Demes, P.C. Lill, V. Haug, F. Hergert, S. Zweigart, U. Herr,