Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1789688 | Journal of Crystal Growth | 2016 | 7 Pages |
Abstract
We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility μ in excess of 35Ã106 cm2/V s at density n=3.0Ã1011/cm2 and μ=18Ã106 cm2/V s at n=1.1Ã1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting μ<40Ã106 cm2/V s. We describe strategies to overcome this limitation.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Geoffrey C. Gardner, Saeed Fallahi, John D. Watson, Michael J. Manfra,