Synthesis and characterization of Si/ZnO coaxial nanorod heterostructure on (100) Si substrate

•Fabrication of Si/ZnO coaxial nanorod heterostructure on (100) Si substrate.•ZnO nanorods were single crystals with a hexagonal structure.•The Si layer was poly-silicon with a cubic structure.•Si/ZnO nanorod coaxial heterostructure fabricated in this work was excellent.

One-dimensional ZnO nanorods were grown vertically on a (100) Si substrate using a vapor phase transport method. Following the fabrication of ZnO nanorods, Si layers were deposited by rapid thermal chemical vapor deposition (RTCVD) directly on the ZnO nanorod/Si (100) substrate. Field emission scanning electron microscopy revealed that a Si/ZnO nanorod coaxial heterostructure were synthesized vertically oriented along the (002) plane on a Si substrate. X-ray diffraction, Energy dispersive X-ray and Raman spectroscopy revealed that the ZnO nanorods were single crystals with a hexagonal structure, and grew with a c-axis orientation perpendicular to the Si substrate, whereas the Si layer was poly-silicon with cubic structure. These results demonstrated the Si/ZnO nanorod coaxial heterostructure were synthesized successfully on a (100) Si substrate and the ZnO nanorod enables the synthesis of a vertically grown well-aligned Si/ZnO coaxial nanorod heterostructure.