(Ga,In)P nanowires grown without intentional catalyst

We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H5)3Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1−xInxP/Ga1−yInyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.