Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1789756 | Journal of Crystal Growth | 2016 | 6 Pages |
Abstract
InGaN is an ideal alloy system for optoelectronic devices due its tunable band gap. Yet high-quality InGaN requires high In concentration, which is a challenging issue that limits its use in green-light LEDs and other devices. In this paper, we investigated the surfactant effect of Sb on the In incorporation on InGaN (0001¯) surface via first-principles approaches. Surface phase diagram was also constructed to determine surface structures under different growth conditions. By analyzing surface stress under different structures, we found that Sb adatom can induce tensile sites in the cation layer, enhancing the In incorporation. These findings may provide fundamental understandings and guidelines for the growth of InGaN with high In concentration.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yiou Zhang, Junyi Zhu,