| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1789779 | Journal of Crystal Growth | 2016 | 5 Pages |
•Higher temperature growth improved the crystallinity of α-(AlGa)2O3.•Growth characteristics of α-(AlGa)2O3/Ga2O3 heterostructures was investigated.•Nearly coherent growth of α-(AlGa)2O3 was evidenced for Al composition of <38%.•The type-I band lineup was expected for the heterostructure.
We report improved growth conditions for corundum-structured α-(AlxGa1−x)2O3, followed by the growth characteristics of α-(AlxGa1−x)2O3/Ga2O3 heterostructures with the use of mist chemical vapor deposition (CVD) technology. Higher growth temperatures, 700–800 °C, were effective for better crystalline quality especially for higher Al composition x. Coherent growth of α-(AlxGa1−x)2O3 was achieved for x=0.03 and 0.11 with the film thickness of about 100 nm. The type-I band lineup was expected for the heterostructure.
