Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures

•We studied diodes based on GaSb/GaAs samples grown by Interfacial Misfit Technique.•We show that possible defect compensation is observed with the annealing treatments.•The turn on voltage of devices decreases as the annealing temperature increases.•The results showed that the annealing improves the electrical properties of devices.

Post-growth annealing treatments in the range 400–600 °C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density–voltage (J–V), Capacitance–voltage (C–V), capacitance–frequency (C–F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed on as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices.