Growth and Hall-effect/photocurrent analysis on BaAl2Se4 layers grown by hot wall epitaxy method

•The epitaxial layer growth was first achieved by the hot wall epitaxy method.•Characteristic property was found by DCXD, Hall effect, and PC measurements.•The valence band splitting was directly extracted by means of PC spectroscopy.•The band gap energy was obtained through the optical absorption and PC measurements.

The epitaxial growth of photoconductive BaAl2Se4 layers, which have a tetragonal structure, was first achieved through the hot wall epitaxy method. From the Hall effect result, in the high temperature range of T>230 K, the mobility decreased as a function of T−3/2 and its scattering was mainly due to the acoustic phonon mode of lattice vibrations through a deformation potential. Thus, at the intermediate temperature range (100