Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method

•We prepared β-SiC nanowires by a simplified CVD method without using catalyst and flowing gases.•The synthesis technique can be easily controlled and utilized.•The growth mechanism for the SiC nanowires is proposed.•This study can be helpful in designing and preparing SiC related nanostructures.

β-SiC nanowires were synthesized by using an improved simple and low-cost thermal evaporation process at 1500 °C, without argon protect and catalyst assistant. The process simplifies the chemical vapor deposition method, which makes it easier to operate and industrialize. X-ray diffraction, Field emission scanning electron microscopy, high-resolution transmission electron microscopy and energy dispersive spectrum were employed to characterize the as-synthesized products. The β-SiC nanowires are about 50–100 nm in diameter, up to several micrometers long and usually grow along [111] direction with a thin oxide shell. A vapor–solid growth mechanism of the nanowires is proposed.