| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1790121 | Journal of Crystal Growth | 2015 | 4 Pages |
Abstract
InGaN/GaN multiple quantum well structures were grown on bulk GaN and on sapphire substrates using the metalorganic vapor-phase epitaxy in order to study the influence of hydrogen during the growth of the GaN barriers. This hydrogen flow had the following effects on the structures: (i) the thickness of the QWs was reduced, (ii) the indium concentration in the QWs was decreased and (iii) the growth rate of the quantum barriers was increased.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Robert Czernecki, Ewa Grzanka, Julita Smalc-Koziorowska, Szymon Grzanka, Dario Schiavon, Grzegorz Targowski, Jerzy Plesiewicz, Pawel Prystawko, Tadeusz Suski, Piotr Perlin, Mike Leszczynski,