Compositions of Mg and Se, surface morphology, roughness and Raman property of Zn1−xMgxSeyTe1−y layers grown at various substrate temperatures or dopant transport rates by MOVPE

•Undoped and phosphorus-doped Zn1−xMgxSeyTe1−y layers were grown on (100) ZnTe substrates by metalorganic vapor phase epitaxy.•The compositions of Mg and Se, surface morphology, roughness and Raman spectrum of undoped Zn1−xMgxSeyTe1−y layers were studied as a function of substrate temperature.•The growth of Zn1−xMgxSeyTe1−y layer nearly-lattice-matched to ZnTe substrate was achieved.•The small lattice mismatch leads to the improvement of the surface roughness.•Phosphorus doping brought about deterioration of crystalline quality.

The growth of undoped and phosphorus (P)-doped Zn1−xMgxSeyTe1−y layers on (100) ZnTe substrates by metalorganic vapor phase epitaxy was carried out. The compositions of Mg and Se, surface morphology, roughness and Raman property were characterized as a function of substrate temperature. Not only the compositions of Mg and Se but also the crystal quality of undoped Zn1−xMgxSeyTe1−y layer strongly depended upon the substrate temperature. Furthermore, the growth of Zn1−xMgxSeyTe1−y layer nearly-lattice-matched to ZnTe substrate was achieved independent of the transport rate of trisdimethylaminophosphorus. Undoped Zn1−xMgxSeyTe1−y layer nearly-lattice-matched to ZnTe led to improvement of surface roughness. On the other hand, P doping brought about deterioration of crystalline quality.