Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1790195 | Journal of Crystal Growth | 2015 | 5 Pages |
Abstract
Light-assisted molecular beam epitaxy is a promising technique for improving the growth of metastable semiconductor alloys traditionally grown at low temperatures. The effect of photon irradiation on adatom incorporation dynamics is studied for GaAs homoepitaxy on vicinal surfaces. Irradiation is found to increase the temperature at which the growth mode transitions from layer-by-layer island nucleation to step flow growth and to alter the surface morphology. These surprising changes are discussed in the context of modification of adatom diffusion and incorporation processes.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Daniel A. Beaton, C. Sanders, K. Alberi,